vishay siliconix SI1404BDH document number: 73487 s10-0645-rev. b, 22-mar-10 www.vishay.com 1 n-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switch for portable device product summary v ds (v) r ds(on) ( )i d (a) a q g (typ.) 30 0.238 at v gs = 4.5 v 1.9 1.1 nc 0.380 at v gs = 2.5 v 1.51 markin g code af x lot tracea b ility and date code part # code y y orderin g information: SI1404BDH-t1-e3 (lead (p b )-free) SI1404BDH-t1-ge3 (lead (p b )-free and halogen-free) sc-70 (6-leads) 6 4 1 2 3 5 to p v ie w d d g d d s n-channel mosfet g d s notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 100 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d 2.37 a t c = 70 c 1.90 t a = 25 c 1.90 t a = 70 c 1.52 b, c pulsed drain current i dm 4 continuous source-drain diode current t c = 25 c i s 1.89 t a = 25 c 1.1 b, c maximum power dissipation t c = 25 c p d 2.28 w t c = 70 c 1.45 t a = 25 c 1.32 b, c t a = 70 c 0.94 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient d t 5 s r thja 70 85 c/w maximum junction-to-foot (drain) steady state r thjf 44 55
www.vishay.com 2 document number: 73487 s10-0645-rev. b, 22-mar-10 vishay siliconix SI1404BDH notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 27.3 mv/c v gs(th) temperature coefficient v gs(th) /t j 3 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.3 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 4 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.9 0.190 0.238 v gs = 2.5 v, i d = 1.51 0.30 0.380 forward transconductance a g fs v ds = 15 v, i d = 1.9 2 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 100 pf output capacitance c oss 30 reverse transfer capacitance c rss 20 total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 1.9 a 1.8 2.7 nc v ds = 15 v, v gs = 2.5 v, i d = 1.9 a 1.1 1.7 gate-source charge q gs 0.4 gate-drain charge q gd 0.6 gate resistance r g f = 1 mhz 1.5 2.3 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 9.87 i d ? 1.52 a, v gen = 4.5 v, r g = 1 10 15 ns rise time t r 30 45 turn-off delay time t d(off) 57.5 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 0.31 a pulse diode forward current a i sm 4 body diode voltage v sd i s = 1.1 a 0.8 1.2 v body diode reverse recovery time t rr i f = 1.1 a, di/dt = 100 a/s, t j = 25 c 55 85 ns body diode reverse recovery charge q rr 105 160 nc reverse recovery fall time t a 34 ns reverse recovery rise time t b 16
document number: 73487 s10-0645-rev. b, 22-mar-10 www.vishay.com 3 vishay siliconix SI1404BDH typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 v thru 3 v v ds - drain-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d v gs = 2.5 v v gs = 2.0 v v gs = 1.5 v 0.1 0.2 0.3 0.4 0.5 0.6 012345 ( ) e c n a t s i s e r - n o - r ds(on) i d - drain current (a) 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 i d = 1.90 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v gs v ds = 15 v v ds = 24 v transfer characteristics curves vs. temperature capacitance on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 v gs - gate-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d t a = 25 c t a = - 55 c t a = 125 c 0 30 60 90 120 150 180 0 5 10 15 20 25 30 c rss v ds - drain-source voltage (v) ) f p ( e c n a t i c a p a c - c c oss c iss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 t j - junction temperature (c) r ds(on) resistance - n o - ) d e z i l a m r o n ( v gs = 4.5 v, i d = 1.90 a v gs = 2.5 v, i d = 1.51 a
www.vishay.com 4 document number: 73487 s10-0645-rev. b, 22-mar-10 vishay siliconix SI1404BDH typical characteristics 25 c, unless otherwise noted forward diode voltage vs. temp threshold voltage 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v - source-to-drain voltage (v) sd ) a ( t n e r r u c e c r u o s - i s 0.01 0.1 1 10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.1 0.3 0.5 0.7 0.9 012345 i d = 1.9 a ( ) e c n a t s i s e r - n o - r ds(on) v gs - gate-to-source voltage (v) t a = 25 c t a = 125 c 0 12 20 4 8 ) w ( r e w o p time (s) 16 1 100 600 10 10 -1 10 -3 10 -2 t a = 25 c safe operating area ) a ( t n e r r u c n i a r d - i d 1 ms t a = 25 c single pulse 10 ms 100 ms dc v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified 1 s 10 s 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 limited by r ds(on) * > bvdss limited
document number: 73487 s10-0645-rev. b, 22-mar-10 www.vishay.com 5 vishay siliconix SI1404BDH typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperature (c) power derating - case temperature (c) 0.4 0.0 0.1 0.2 0.3 25 50 75 100 125 150 ) w ( n o i t a p i s s i d r e w o p t c
www.vishay.com 6 document number: 73487 s10-0645-rev. b, 22-mar-10 vishay siliconix SI1404BDH typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73487 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. duty cycle, d = 2. per unit base = r thja = 100 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 1 0.1 0.01 0.2 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.1
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